Fundamental Technologies

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Table 4.10 Composition Aperture (WART) parameters and logic

Figure 4.30 Composition aperture energy losses

Figure 4.31 Delta E versus E for composition aperture (WART)

Figure 4.32 WART channel definitions

  Absorber 2 Absorber 3
Absorber Material Silicon Silicon
Thickness (microns) 4.50 200.00
RMS UNC (microns) 0.10 2.00
Max. Conical Half Ang. 22.50 22.50
Detector AMS Noise (keV) 29.00 0.00
Electronic Noise (keV) 65.00 10.00

Table 4.14 WART passband

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Updated 11/26/02, T. Hunt-Ward